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Phonon Inelastic Scattering in Ultrathin HfO2-Based Layer-by-Layer Nanostructure

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Abstract

HfO2, as a kind of high dielectric ceramic material, has important applications in microelectronic devices. With device miniaturization, the intrinsic thermal conductivity and thermal boundary resistance of ultrathin HfO2 films on Si substrate are becoming increasingly important in thermal management related to heat conduction for gate dielectrics on a few nanometer scales. To study the thickness and temperature dependences of the thermal properties, a series of ultrathin HfO2 films with thickness of 2 nm, 6 nm, 10 nm and 20 nm are grown on Si substrates. The intrinsic thermal conductivities and the thermal boundary resistances are simultaneously measured by the two-color femtosecond pump–probe technique between 300 and 500 K. The intrinsic thermal conductivity of the 2 nm film is about 0.13 Wm−1·K−1, and the thermal conductivity of HfO2 is positive correlated to the thickness. The measured thermal boundary conductance is positive correlated to the temperature. The contributions of elastic and inelastic scattering is determined through the anharmonic inelastic model, and the results show that the inelastic scattering plays a nonnegligible role in interfacial thermal transport.

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Data Availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Funding

We acknowledge funding supports from the National Natural Science Foundation of China (Grant No. 51876223) and Natural Science Foundation of Shandong Province (Grant No. ZR2019MEE081).

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Authors and Affiliations

  1. Thermal Engineering and Power Department, China University of Petroleum, Tsingtao, 266580, China

    Wenlong Bao & Zhaoliang Wang

  2. School of Energy and Power Engineering, Dalian University of Technology, Dalian, 116024, China

    Dawei Tang

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  1. Wenlong Bao
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WB: performed the experiments, simulations and drafted the manuscript under the supervising of ZW. ZW and DT: reviewed and edited the manuscript.

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Correspondence to Zhaoliang Wang.

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Bao, W., Wang, Z. & Tang, D. Phonon Inelastic Scattering in Ultrathin HfO2-Based Layer-by-Layer Nanostructure. Int J Thermophys 43, 179 (2022). https://doi.org/10.1007/s10765-022-03094-x

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