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Calculations of Thermal Expansivity and Lattice Constant of GaN Using Integer and Noninteger n-Dimensional Debye Functions

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Abstract

A theoretical model to calculate the thermal expansivity and lattice constant are described and used to evaluate the GaN semiconductor. This method is based on the use of integer and noninteger n-dimensional Debye functions for analytical evaluation of the thermal expansivity and lattice constant. The agreement between calculated and experimental values for GaN is generally satisfactory.

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  1. Department of Physics, Faculty of Arts and Sciences, Gaziosmanpasa University, Tokat, Turkey

    Salih Saygi

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  1. Salih Saygi
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Correspondence to Salih Saygi.

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Saygi, S. Calculations of Thermal Expansivity and Lattice Constant of GaN Using Integer and Noninteger n-Dimensional Debye Functions. Int J Thermophys 33, 2377–2381 (2012). https://doi.org/10.1007/s10765-012-1344-4

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  • DOI: https://doi.org/10.1007/s10765-012-1344-4

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