Abstract
This article presents the results of theoretical and experimental studies of the influence of plasma waves on the photoacoustic signals of Si samples. The aim of these investigations was to find and examine the sensitive measurement configurations and the configurations of the sample in the photoacoustic cell for detection and measurement of the lifetime of excess carriers. Two measurement configurations were examined: transmission and phase lag and two configurations of the sample in the photoacoustic cell. This article demonstrates that both configurations for samples with differently prepared surfaces are effective for observation and detection of plasma waves with the photoacoustic method.
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Acknowledgments
This research work was financed from the budget funds for science of the Ministry of Science and Higher Education in the years 2010–2012 as a research project No. N N515604339. The authors, with hope for further cooperation, would like to thank Dr. Nikolai Abrosimov (Institute of Crystal Growth, Max-Born-Str. 2, D-12469 Berlin, Germany) for especially prepared silicon samples.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Chrobak, L., Malinski, M. & Patryn, A. Influence of Plasma Waves on the Photoacoustic Signal of Silicon Samples. Int J Thermophys 32, 1986 (2011). https://doi.org/10.1007/s10765-011-1028-5
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DOI: https://doi.org/10.1007/s10765-011-1028-5