The density and thermal conductivity of a high-purity silicon melt were measured over a wide temperature range including the undercooled regime by non-contact techniques accompanied with electromagnetic levitation (EML) under a homogeneous and static magnetic field. The maximum undercooling of 320 K for silicon was controlled by the residual impurity in the specimen, not by the melt motion or by contamination of the material. The temperature dependence of the measured density showed a linear relation for temperature as: ρ(T) = 2.51 × 103−0.271(T−T m) kg · m−3 for 1367 K < T < 1767 K, where T m is the melting point of silicon. A periodic heating method with a CO2 laser was adopted for the thermal conductivity measurement of the silicon melt. The measured thermal conductivity of the melt agreed roughly with values estimated by a Wiedemann–Franz law.
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Inatomi, Y., Onishi, F., Nagashio, K. et al. Density and Thermal Conductivity Measurements for Silicon Melt by Electromagnetic Levitation under a Static Magnetic Field. Int J Thermophys 28, 44–59 (2007). https://doi.org/10.1007/s10765-007-0160-8
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DOI: https://doi.org/10.1007/s10765-007-0160-8