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D-Band Transmitter/Receiver Chipset with End-Fire On-chip Antennas Using 0.13-μm SiGe BiCMOS Technology

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Abstract

This paper presents a D-band (110–170 GHz) transmitter/receiver (Tx/Rx) chipset with end-fire on-chip antennas (OCAs) using 0.13-μm SiGe BiCMOS technology. The input LO signal frequency of the chipset is 31.25 GHz. A 62.5-GHz frequency doubler, a D-band 2nd-harmonic up-conversion mixer, a power amplifier (PA), and an end-fire antenna are integrated in the Tx. An end-fire antenna, a D-band low-noise amplifier (LNA), a 2nd-harmonic down-conversion mixer, and a 62.5-GHz frequency doubler are integrated in the Rx. The end-fire OCA has gain and efficiency of 4.1 dBi and 83%, respectively. Maximum measured effective isotropic radiation power (EIRP) of 9.2 dBm and conversion gain of 21 dB are achieved for the Tx and Rx, respectively. The Tx/Rx are packaged on PCBs through wire bonding and chip-to-chip wireless communication using 16QAM modulation with the data rate of 4 Gb/s is demonstrated. The DC power consumption of the whole chip is ~1150 mW, and the total chip size is 2 × 3.5 mm2.

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Acknowledgments

The authors would like to thank Weihua Xu and Raymond Zhang of the Tektronix (China) Co., Ltd., for providing assistance in the measurement work presented.

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Authors and Affiliations

  1. Ministerial Key Laboratory of JGMT, Nanjing University of Science and Technology, Nanjing, China

    Chunhong Chen & Wen Wu

  2. Chengdu Chipzone Technology Co. Ltd, Chengdu, 610200, China

    Xiaodong Deng & Yong-Zhong Xiong

  3. School of EEE, Nanyang Technological University, Singapore, Singapore

    Yihu Li

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  1. Chunhong Chen
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  2. Xiaodong Deng
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  3. Yihu Li
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  4. Wen Wu
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  5. Yong-Zhong Xiong
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Correspondence to Xiaodong Deng.

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Chen, C., Deng, X., Li, Y. et al. D-Band Transmitter/Receiver Chipset with End-Fire On-chip Antennas Using 0.13-μm SiGe BiCMOS Technology. J Infrared Milli Terahz Waves 41, 322–339 (2020). https://doi.org/10.1007/s10762-019-00665-2

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  • DOI: https://doi.org/10.1007/s10762-019-00665-2

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