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A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range

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Abstract

This paper presents a novel transistor unit cell which is intended to realize compact active switches in the high millimeter-wave frequency range. The unit cell consists of the combination of shunt and common gate transistor within a four-finger transistor cell, achieving gain in the amplifying state as well as good isolation in the isolating state. Gate width-dependent characteristics of the unit cell as well as the design of actual switch implementations are discussed in detail. To verify the concept, two switches, a single pole double throw (SPDT) switch and single pole quadruple throw (SP4T) switch, intended for the WR3 frequency range (220–325 GHz) were manufactured and characterized. The measured gain at 250 GHz is 4.6 and 2.2 dB for the SPDT and SP4T switch, respectively. An isolation of more than 24 dB for the SPDT switch and 12.8 dB for the SP4T switch was achieved.

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References

  1. A.C. Ulusoy, P. Song, R.L. Schmid, W.T. Khan, M. Kaynak, B. Tillack, J. Papapolymerou, and J.D. Cressler. A low-loss and high isolation d-band spdt switch utilizing deep-saturated sige hbts. Microwave and Wireless Components Letters, IEEE, 24(6):400–402, June 2014.

  2. M. Uzunkol and G.M. Rebeiz. 140 - 220 ghz spst and spdt switches in 45 nm cmos soi. Microwave and Wireless Components Letters, IEEE, 22(8):412–414, Aug 2012.

  3. F. Thome, M. Ohlrogge, A. Leuther, M. Schlechtweg, and O. Ambacher. An investigation of millimeter wave switches based on shunt transistors including spdt switch mmics up to 300 ghz. In 2016 IEEE MTT-S International Microwave Symposium (IMS), pages 1–4, May 2016.

  4. I. Gresham and A. Jenkins. A fast switching, high isolation absorptive spst sige switch for 24 ghz automotive applications. In Microwave Conference, 2003. 33rd European, volume 3, pages 903–906 Vol.3, Oct 2003.

  5. T.M. Hancock, I. Gresham, and G.M. Rebeiz. A differential sub-nanosecond high-isolation absorptive active sige 24 ghz switch for uwb applications. In Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE, pages 497–500, June 2004.

  6. Jong-Ryul Yang, Dong-Wook Kim, and Songcheol Hong. A 24-ghz active spst mmic switch with ingap/gaas hbts. Microwave and Optical Technology Letters, 50(8):2155–2158, 2008.

  7. Aleksey Dyskin, Sandrine Wagner, Dan Ritter, and Ingmar Kallfass. An active 60-90 ghz single pole double throw switch mmic. Journal of Infrared, Millimeter, and Terahertz Waves, 35(4):412–417, 2014.

  8. D. Müller, U. Lewark, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass. Active single pole double throw switches for d-band applications. In 2016 IEEE MTT-S International Microwave Symposium (IMS), pages 1–4, May 2016.

  9. Frank Ellinger. Radio Frequency Integrated Circuits and Technologies. Springer Publishing Company, Incorporated, 2nd edition, 2008.

  10. M. Seelmann-Eggebert, T. Merkle, F. van Raay, R. Quay, and M. Schlechtweg. A systematic state-space approach to large-signal transistor modeling. Microwave Theory and Techniques, IEEE Transactions on, 55(2):195–206, Feb 2007.

  11. A. Leuther, A. Tessmann, M. Dammann, H. Massler, M. Schlechtweg, and O. Ambacher. 35 nm mhemt technology for thz and ultra low noise applications. In 2013 International Conference on Indium Phosphide and Related Materials (IPRM), pages 1–2, May 2013.

  12. K. Wang, M. Jones, and S. Nelson. The s-probe-a new, cost-effective, 4-gamma method for evaluating multi-stage amplifier stability. In 1992 IEEE MTT-S Microwave Symposium Digest, pages 829–832 vol.2, June 1992.

  13. D. Müller, J. Schäfer, D. Geenen, H. Massler, A. Tessmann, A. Leuther, T. Zwick, and I. Kallfass. Electromagnetic field simulation of mmics including rf probe tips. In 2017 47th European Microwave Conference (EuMC), 2017.

  14. I. Kallfass, S. Diebold, H. Massler, S. Koch, M. Seelmann-Eggebert, and A. Leuther. Multiple-throw millimeter-wave fet switches for frequencies from 60 up to 120 ghz. In Microwave Conference, 2008. EuMC 2008. 38th European, pages 1453–1456, Oct 2008.

  15. P. Song, R.L. Schmid, A.C. Ulusoy, and J.D. Cressler. A high-power, low-loss w-band spdt switch using sige pin diodes. In Radio Frequency Integrated Circuits Symposium, 2014 IEEE, pages 195–198, June 2014.

  16. F. Meng, K. Ma, K. S. Yeo, C. C. Boon, W. M. Lim, and S. Xu. A 220 - 285 ghz spdt switch in 65-nm cmos using switchable resonator concept. IEEE Transactions on Terahertz Science and Technology, 5(4):649–651, July 2015.

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Acknowledgements

We express our gratitude to our colleagues in the IAF technology department for their excellent contributions during epitaxial growth and wafer processing.

Funding

This work was supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) in the framework of the MilliPhase project (Grant KA3062/10-1).

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Correspondence to Daniel Müller.

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Müller, D., Scherer, G., Lewark, U.J. et al. A Novel Unit Cell for Active Switches in the Millimeter-Wave Frequency Range. J Infrared Milli Terahz Waves 39, 161–176 (2018). https://doi.org/10.1007/s10762-017-0454-2

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  • DOI: https://doi.org/10.1007/s10762-017-0454-2

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