Robust Sub-harmonic Mixer at 340 GHz Using Intrinsic Resonances of Hammer-Head Filter and Improved Diode Model
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This paper presents a sub-harmonic mixer at 340 GHz based on anti-parallel Schottky diodes (SBDs). Intrinsic resonances in low-pass hammer-head filter have been adopted to enhance the isolation for different harmonic components, while greatly minimizing the transmission loss. The application of new DC grounding structure, impedance matching structure, and suspended micro-strip mitigates the negative influences of fabrication errors from metal cavity, quartz substrate, and micro-assembly. An improved lumped element equivalent circuit model of SBDs guarantees the accuracy of simulation, which takes current-voltage (I/V) behavior, capacitance-voltage (C/V) behavior, carrier velocity saturation, DC series resistor, plasma resonance, skin effect, and four kinds of noise generation mechanisms into consideration thoroughly. The measurement indicates that with local oscillating signal of 2 mW, the lowest double sideband conversion loss is 5.5 dB at 339 GHz; the corresponding DSB noise temperature is 757 K. The 3 dB bandwidth of conversion loss is 50 GHz from 317 to 367 GHz.
KeywordsTerahertz Sub-harmonic mixer Hammer-head filter Schottky diode Device modeling
The authors would like to thank Cheng-Li Xie, Wei Huang, Hai-Long Hao, Cheng-Wei Li, and Da-Long Zhou in IEE CAEP for their support on module fabrication and testing.
- 9.T. Waliwander et al., “Sub-millimeter Wave 183 GHz and 366 GHz MMIC Membrane Sub-harmonic Mixers”, in Microwave Symposium Digest (MTT), 2011 I.E. MTT-S International, 2011, pp. 1–4.Google Scholar
- 10.V. Drakinskiy, “Terahertz GaAs Schottky diode mixer and multiplier MIC’s based on e-beam technology”, in Indium Phosphide and Related Materials (IPRM), 2013 International Conference on, 2013, pp. 1–2.Google Scholar
- 12.O. Cojocari et al., “Schottky-based THz-MIC-s”, in Proceedings of the 6th European Microwave Integrated Circuits Conference, 2011, pp. 232–235.Google Scholar
- 13.J. L. Hesler, “Planar Schottky Diodes In Submillimeter-Wavelength Waveguide Receivers”, Ph.D. dissertation, School of Engineering and Applied Science, Univ. of Virginia, Charlottesville, VA, 1996.Google Scholar
- 15.S. M. SZE, Kwok K. Ng, “Metal-Semiconductor Contacts”, in Physics of Semiconductor Devices, 3rd ed, Hoboken, New Jersey: John Wiley & Sons, Inc., 2007, pp. 134–196.Google Scholar
- 18.D. W. Porterfield, “Millimeter-wave planar varactor frequency doublers”, Ph.D. dissertation, School of Engineering and Applied Science, Univ. of Virginia, Charlottesville, 1998.Google Scholar
- 19.B. J. Rizzi, “Planar varactor diodes for millimeter and submillimeter wavelengths”, Ph.D. dissertation, School of Engineering and Applied Science, Univ. of Virginia, Charlottesville, 1994.Google Scholar
- 20.E. L. Kollberg et al., “Current Saturation in Submillimeter Wave Varactors”, in 2nd International Symposium on Space Terahertz Technology, 1992, pp. 306–322.Google Scholar
- 21.J. East, “Performance Limitation of Varactor Multipliers”, in 4th International Symposium on Space Terahertz Technology, 1993, pp. 312–325.Google Scholar
- 24.B. Thomas, “Etude et réalisation d’une tête de réception hétérodyne en ondes submillimétrique pour l’étude des atmospheres et surfaces de planets”, PhD dissertation, LERMA-Observatoire de Paris, France, 2004.Google Scholar