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The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode

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Abstract

A planar Schottky barrier diode with the designed Schottky contact area of approximately 3 μm2 is developed on gallium arsenide (GaAs) material. The measurements of the developed planar Schottky barrier diode indicate that the zero-biased junction capacitance Cj0 is 11.0 fF, the parasitic series resistance RS is 3.0 Ω, and the cut off frequency fT is 4.8 THz. A monolithically integrated fourth subharmonic mixer with this diode operating at the radio frequency (RF) signal frequency of 0.34 THz with the chip area of 0.6 mm2 is implemented. The intermediate frequency (IF) bandwidth is from DC to 40 GHz. The local oscillator (LO) bandwidth is 37 GHz from 60 to 97 GHz. The RF bandwidth is determined by the bandwidth of the on chip antenna, which is 28 GHz from 322 to 350 GHz. The measurements of the mixer demonstrated a conversion loss of approximately 51 dB.

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Authors and Affiliations

  1. Terahertz Semiconductor Device Laboratory of China Academy of Engineering Physics, Chengdu, China

    Xiaodong Tong, Qian Li, Ning An, Wenjie Wang, Xiaodong Deng, Liang Zhang, Haitao Liu, Jianping Zeng, Zhiqiang Li, Hailing Tang & Yong-Zhong Xiong

Authors
  1. Xiaodong Tong
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  2. Qian Li
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  3. Ning An
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  4. Wenjie Wang
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  5. Xiaodong Deng
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  6. Liang Zhang
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  7. Haitao Liu
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  8. Jianping Zeng
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  9. Zhiqiang Li
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  10. Hailing Tang
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  11. Yong-Zhong Xiong
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Corresponding author

Correspondence to Yong-Zhong Xiong.

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Tong, X., Li, Q., An, N. et al. The Study of 0.34 THz Monolithically Integrated Fourth Subharmonic Mixer Using Planar Schottky Barrier Diode. J Infrared Milli Terahz Waves 36, 1112–1122 (2015). https://doi.org/10.1007/s10762-015-0208-y

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  • DOI: https://doi.org/10.1007/s10762-015-0208-y

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