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Nanosecond Microwave Semiconductor Switches for 258…266 GHz

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Abstract

Optically controlled microwave switches open the way to commutate radiation frequencies up to terahertz. The switches are based on induced photoconductivity effect in semiconductors changing properties of resonant systems they are built in. The prospective applications—plasma heating, radars, particle accelerators, and spectroscopy—often require switching rapidness up to nanoseconds and coherence of output pulse packets between each other. Our waveguide semiconductor switches seem to be the most promising to satisfy these requirements. Several working switches have been built and tested for frequency range from 258 to 266 GHz at microwave power of 25 mW. The maximum possible microwave power to be switched is expected up to several watts or even higher with special heat dissipation means. The switches demonstrate nanosecond level of performance when controlled by a 10-ns green 527-nm laser with pulse energy of about 100 nJ.

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Acknowledgments

The study has been partially supported by Russian Foundation for Basic Research, Project No. 15-08-03158.

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Authors and Affiliations

  1. Institute of Applied Physics (IAP), RAS, Nizhny Novgorod, Russia

    Maxim Kulygin, Gregory Denisov, Ksenia Vlasova, Evgeny Novikov, Vladimir Belousov, Nikolay Andreev, Alexander Makarov, Serguei Shubin, Mikhail Khozin, Anton Gashturi, Dmitry Sobolev, Andrey Fokin & Alexander Tsvetkov

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  1. Maxim Kulygin
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  2. Gregory Denisov
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  3. Ksenia Vlasova
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  4. Evgeny Novikov
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  5. Vladimir Belousov
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  6. Nikolay Andreev
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  7. Alexander Makarov
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  8. Serguei Shubin
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  9. Mikhail Khozin
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  10. Anton Gashturi
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  11. Dmitry Sobolev
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  12. Andrey Fokin
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  13. Alexander Tsvetkov
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Correspondence to Maxim Kulygin.

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Kulygin, M., Denisov, G., Vlasova, K. et al. Nanosecond Microwave Semiconductor Switches for 258…266 GHz. J Infrared Milli Terahz Waves 36, 845–855 (2015). https://doi.org/10.1007/s10762-015-0182-4

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  • DOI: https://doi.org/10.1007/s10762-015-0182-4

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