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Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm


We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material’s relaxation time constants.

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Correspondence to R. J. B. Dietz.

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Dietz, R.J.B., Wilk, R., Globisch, B. et al. Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm. J Infrared Milli Terahz Waves 34, 231–237 (2013).

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  • Photoconductive THz emitter
  • Photoconductive THz detector
  • Indium Gallium Arsenide
  • THz time-domain spectroscopy
  • Ytterbium-doped femtosecond fiber laser