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Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm

Journal of Infrared, Millimeter, and Terahertz Waves volume 34, pages 231–237 (2013)Cite this article

Abstract

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material’s relaxation time constants.

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Authors and Affiliations

  1. Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institute, Berlin, Germany

    R. J. B. Dietz, B. Globisch, H. Roehle, D. Stanze, S. Ullrich, B. Sartorius & M. Schell

  2. Menlo Systems GmbH, Martinsried, Germany

    R. Wilk

  3. Department of Physics, Philipps-Universität Marburg, Marburg, Germany

    S. Schumann, N. Born & M. Koch

Authors
  1. R. J. B. Dietz
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  2. R. Wilk
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  3. B. Globisch
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  4. H. Roehle
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  5. D. Stanze
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  6. S. Ullrich
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  7. S. Schumann
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  8. N. Born
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  9. M. Koch
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  10. B. Sartorius
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  11. M. Schell
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Correspondence to R. J. B. Dietz.

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Dietz, R.J.B., Wilk, R., Globisch, B. et al. Low Temperature Grown Be-doped InGaAs/InAlAs Photoconductive Antennas Excited at 1030 nm. J Infrared Milli Terahz Waves 34, 231–237 (2013). https://doi.org/10.1007/s10762-013-9968-4

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  • DOI: https://doi.org/10.1007/s10762-013-9968-4

Keywords

  • Photoconductive THz emitter
  • Photoconductive THz detector
  • Indium Gallium Arsenide
  • THz time-domain spectroscopy
  • Ytterbium-doped femtosecond fiber laser