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Terahertz Imaging Detectors in CMOS Technology

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Abstract

Square-law power detection circuits with on-chip antennas and amplifiers are presented for the detection of 0.65-THz radiation in a low-cost 0.25-μm CMOS technology. The circuit architecture combines metal-insulator-metal (MIM) coupling capacitors with NMOS transistors to facilitate self-mixing in a resistive mixer. A low-frequency (quasi-static) and a high-frequency (non-quasi-static) analysis of the broad-band circuit is presented. Current and voltage readout techniques of non-amplified detectors are compared, and exhibit a measured responsivity of 5.3 mA/W and 150 V/W respectively. A monolithic integrated 3×5 pixel focal-plane array has been used for single-pixel and multi-pixel imaging of concealed objects at 0.65 THz.

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Authors and Affiliations

  1. Institute for High-Frequency and Communication Technology, University of Wuppertal, Rainer-Gruenter-Str. 21, 42119, Wuppertal, Germany

    Erik Öjefors & Ullrich R. Pfeiffer

  2. Physikalisches Institut, Johann Wolfgang Goethe-University, Max-von-Laue-Str. 1, 60438, Frankfurt am Main, Germany

    Alvydas Lisauskas, Diana Glaab & Hartmut G. Roskos

Authors
  1. Erik Öjefors
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  2. Alvydas Lisauskas
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  3. Diana Glaab
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  4. Hartmut G. Roskos
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  5. Ullrich R. Pfeiffer
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Correspondence to Ullrich R. Pfeiffer.

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Öjefors, E., Lisauskas, A., Glaab, D. et al. Terahertz Imaging Detectors in CMOS Technology. J Infrared Milli Terahz Waves 30, 1269–1280 (2009). https://doi.org/10.1007/s10762-009-9569-4

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  • DOI: https://doi.org/10.1007/s10762-009-9569-4

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