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A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier

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Abstract

A Ka-band four-stage self-biased monolithic low noise amplifier has been developed using a commercial 0.18-µm pseudomorphic high electron-mobility transistor (pHEMT) process. For the application of self-bias technique, the low noise amplifier (LNA) is biased from a single power supply rail. The LNA has achieved a broadband performance with a gain of more than 18 dB, a noise figure of less than 3.8 dB in the RF frequency of 26 to 40 GHz. The chip size is 3 × 1 mm2.

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Acknowledgment

This work has supported by the National Natural Science Foundation of China (NSFC) and Youth Science and Technology Fund of UESTC.

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Authors and Affiliations

  1. Microwave Center, University of Electronic Science and Technology of China, Chengdu, 610054, People’s Republic of China

    Ziqiang Yang, Tao Yang & Yu Liu

Authors
  1. Ziqiang Yang
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  2. Tao Yang
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  3. Yu Liu
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Correspondence to Ziqiang Yang.

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Yang, Z., Yang, T. & Liu, Y. A Ka-band Four-stage Self-biased Monolithic Low Noise Amplifier. J Infrared Milli Terahz Waves 30, 417–422 (2009). https://doi.org/10.1007/s10762-008-9460-8

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  • DOI: https://doi.org/10.1007/s10762-008-9460-8

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