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Diamond Schottky Contact Transit-time Diode for Terahertz Power Generation

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Abstract

A diamond mixed tunneling and avalanche transit-time diode is designed in this letter. Schottky contact is used in this kind of diode to reduce the contact resistance. Electrical characteristics of n-type diamond Schottky contact have been accurately investigated. Total output power of such transit-time diode is evaluated using an accurate large-signal model. The results indicate that the new type transit-time diode can operate with the frequency up to several terahertzes. The output power density is more than 1.185 MW/cm2 from 1.07 to 2.12THz. About 17% improvement in efficiency is found at 2.12THz.

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Acknowledgments

The author wish to acknowledge financial support from the National Natural Science Foundation of China ( 60471017 & 60621002)

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Authors and Affiliations

  1. State Key Laboratory of Millimeter Waves, Southeast University of China, Si Pai Lou 2#, 210096, Nanjing, People’s Republic of China

    Tao Wu

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  1. Tao Wu
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Correspondence to Tao Wu.

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Wu, T. Diamond Schottky Contact Transit-time Diode for Terahertz Power Generation. Int J Infrared Milli Waves 29, 634–640 (2008). https://doi.org/10.1007/s10762-008-9363-8

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  • DOI: https://doi.org/10.1007/s10762-008-9363-8

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