Abstract
The origins of HEMT distortion in passive control applications as SPST switch are presented in this paper. Also, this paper describes the change of the AlGaN/GaN HEMT switch distortion properties (second-and third distortion intercept points) over a wide range of temperature. The results indicate that the change in second-and third-order distortion intercept points is smaller (about 2dBm) over a wide range of temperature from −50 to +300°C. A comparison of the GaN-based HEMT switch with InP-and GaAs-HEMT switches shows that the GaN technology generates lower distortion than its InP and GaAs technologies counterpart.
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Kameche, M. DISTORTION PROPERTIES OF GaN SWITCHES AT HIGH-TEMPERATURES. Int J Infrared Milli Waves 27, 1133–1144 (2006). https://doi.org/10.1007/s10762-006-9128-1
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DOI: https://doi.org/10.1007/s10762-006-9128-1