Abstract
Vanadium oxides thin films for uncooled bolometric detectors have been fabricated on Si3N4-film-coated Si substrates by low temperature reactive ion beam sputtering in a controlled oxygen atmosphere. The typical growth temperature is kept at 200°C during sputtering, which is compatible with the post-CMOS technology. The as-deposited film exhibits sheet resistance and temperature coefficient resistant of 32 kΩ and −0.025 K−1 at room temperature, respectively.
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Wang, H., Yi, X., Chen, S. et al. Reactive Ion Beams Sputtering of Vanadium Oxides Films for Uncooled Microbolometer. Int J Infrared Milli Waves 26, 421–431 (2005). https://doi.org/10.1007/s10762-005-3439-5
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DOI: https://doi.org/10.1007/s10762-005-3439-5