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Novel pulsed electron spin resonance system and studies of phosphorus in natural silicon

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Abstract

An X-band pulsed electron spin resonance system has been designed and constructed specifically for studies of decoherence times of phosphorus donor electrons in silicon. The microwave electromagnetic field aspects of the structure have been analysed, and the probe head geometry optimised, through 3D electromagnetic simulations. Results for natural silicon samples at temperatures down to 6 K, are analysed and we obtain an estimate of the isolated spin decoherence time in natSi approximately an order of magnitude longer than previously measured.

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Correspondence to W. D. Hutchison.

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Suwuntanasarn, N., Hutchison, W.D., Milford, G.N. et al. Novel pulsed electron spin resonance system and studies of phosphorus in natural silicon. Hyperfine Interact 180, 25–28 (2007). https://doi.org/10.1007/s10751-008-9682-0

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  • DOI: https://doi.org/10.1007/s10751-008-9682-0

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