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Formation of DX-centers in indium doped CdTe

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Abstract

In CdTe, the achievable n-type doping is limited by the formation of DX-centers. A characteristic feature of DX-centers is the ‘persistent photoconductivity (PPC)’ which is created by illumination at low temperatures and caused by a metastable state of the DX-center. The DX-center and the PPC effect in n-type CdTe are theoretically explained by the ‘large lattice relaxation model’. PAC measurements on In doped CdTe using 111In/111Cd and, in addition, resistivity measurements on the same samples have been performed. Below 150 K, the samples showed a PPC effect that was accompanied by an increase of about 20% of the carrier concentration. This effect is not accompanied by any changes of the observed EFG. Possible explanations of the EFG observed, originally assigned to the DX-center, will be discussed. Finally, first reports on the investigation of DX-centers in CdTe using the radioactive isotope 117Cd decaying to 117In are presented.

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Authors and Affiliations

  1. Technische Physik, Universität des Saarlandes, Building E2.6, P.O. Box 151150, 66041, Saarbrücken, Germany

    M. Türker, J. Kronenberg, M. Deicher, H. Wolf & Th. Wichert

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  1. M. Türker
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  2. J. Kronenberg
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  3. M. Deicher
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  4. H. Wolf
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  5. Th. Wichert
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Correspondence to M. Deicher.

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Türker, M., Kronenberg, J., Deicher, M. et al. Formation of DX-centers in indium doped CdTe. Hyperfine Interact 177, 103–110 (2007). https://doi.org/10.1007/s10751-008-9666-0

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