Abstract
Nuclear spin manipulation using an interface of diluted magnetic semiconductors (DMSs) is proposed. On the basis of the first-principles electronic structure calculation, we show that the hyperfine fields at an impurity site in the interface between a DMS and a base substance is dramatically changed by an external electric field. The electric field dependence of the hyperfine fields at the impurity nucleus in the interface of (InMn)As and (GaMn)As is examined.
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References
Machida, T., Yamazaki, T., et al.: Appl. Phys. Lett. 82, 409 (2003)
Kane, B.E.: Nature 393, 133 (1998)
Akai, H.: Phys. Rev. Lett. 81, 3002 (1998)
Akai, H., Akai, M., Blügel, S., et al.: Prog. Theor. Phys. 101, 11 (1990)
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Ogura, M., Akai, H. Nuclear spin manipulation in interfaces of diluted magnetic semiconductors. Hyperfine Interact 176, 59–63 (2007). https://doi.org/10.1007/s10751-008-9634-8
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DOI: https://doi.org/10.1007/s10751-008-9634-8