Abstract
Data on the synthesis of aluminum oxide nanostructures on the silicon surface by the oxidation of atomic aluminum layers with a high-frequency inductively coupled oxygen discharge plasma are reported. The conditions for the formation and the properties of aluminum oxide nanolayers were determined. It was found that this method affords oxide films with uniform structure and composition.
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Translated from Khimiya Vysokikh Energii, Vol. 39, No. 5, 2005, pp. 379–381.
Original Russian Text Copyright © 2005 by Potapov, Matyuk, Trakhtenberg.
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Potapov, V.K., Matyuk, V.M. & Trakhtenberg, L.I. Synthesis of Aluminum Oxide Nanostructures on the Silicon Surface. High Energy Chem 39, 330–332 (2005). https://doi.org/10.1007/s10733-005-0065-7
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DOI: https://doi.org/10.1007/s10733-005-0065-7