Abstract
Electrochemical cells in the form of pressed pellets and polycrystalline films prepared from the PbSe + PbSeO3 two-phase composite are investigated by impedance spectroscopy. The dispersion analysis of the frequencies of the real and imaginary parts of the complex impedance made it possible to reveal a unified equivalent electric circuit for these cells and to calculate its parameters. The optical (εhf) and static (εlf) permittivities of the PbSe and PbSeO3 phases are determined. The permittivities εhf = 20–45 and εlf = 200–280 obtained for the PbSe phase are in reasonable agreement with the data available in the literature. The temperature dependences of the ac and dc resistances indicate that the PbSe + PbSeO3 composite undergoes a phase transition at a temperature T c ≅ 363 K.
Similar content being viewed by others
REFERENCES
Redl, F.X., Cho, K.S., Mirray, C.B., and O'Brien, S., Three-Dimensional Binary Superlattices of Magnetic Nanocrystals and Semiconductor Quantum Dots, Nature (London), 2003, vol. 423, pp. 968–971.
Kvyatkovskii, O.E. and Maksimov, E.G., Microscopic Theory of Lattice Dynamics: Nature of Ferroelectric Instability in Crystals, Usp. Fiz. Nauk, 1988, vol. 154, no.1, pp. 3–48.
Volkov, B.A., Pankratov, O.A., and Sazonov, A.V., Theory of the Electron Energy Spectrum of A 4 B 6 Semiconductors, Zh. Eksp. Teor. Fiz., 1983, vol. 85, no.4 (10), pp. 1395–1408.
Ravich, Yu.I., Efimova, B.A., and Smirnov, I.A., Metody issledovaniya poluprovodnikov v primenenii k khal'kogenidam svintsa PbTe, PbSe, PbS (Methods for Investigating Semiconductors as Applied to PbTe, PbSe, and PbS Lead Chalcogenides), Stil'bans, L.S., Ed., Moscow: Nauka, 1968.
Abrikosov, N.Kh. and Shelimova, L.E., Poluprovodnikovye materialy na osnove soedinenii A 4 B 6 (Semiconductor Materials Based on A 4 B 6 Compounds), Moscow: Nauka, 1975.
Kvyatkovskii, O.E., Dipole-Dipole Interaction in Crystals and Ferroelectric Properties of A 4 B 6 Compounds, Fiz. Tverd. Tela (Leningrad), 1986, vol. 28, no.4, pp. 983–990.
Lebedev, A.I. and Sluchinskaya, I.A., Effect of Dopants on Ferroelectric Phase Transitions in PbTe1− x S x and Pb1−x Ge x Te, Fiz. Tverd. Tela (St. Petersburg), 1993, vol. 35, no.3, pp. 629–635.
Volkov, B.A., Kushnir, V.P., and Pankratov, O.A., Behavior of the Permittivity of A 4 B 6 Semiconductors upon Structural Phase Transitions, Fiz. Tverd. Tela (Leningrad), 1982, vol. 24, no.2, pp. 415–422.
Abdullin, Kh.A., Demin, V.N., and Lebedev, A.I., Scattering of Free Carriers in the Vicinity of the Phase Transition in PbTe1−x S x Solid Solutions, Fiz. Tverd. Tela (Leningrad), 1986, vol. 28, no.4, pp. 1020–1025.
Brandt, N.B., Gitsu, D.V., Popovich, N.S., Sidorov, V.I., and Chudinov, S.M., Superconductivity of PbTe and PbSe Compounds under High Pressure, Pis'ma Zh. Eksp. Teor. Fiz., 1975, vol. 22, no.4, pp. 225–229.
Timofeev, Yu.A., Vinogradov, B.V., and Yakovlev, E.N., Superconductivity of Lead Sulfide, Fiz. Tverd. Tela (Leningrad), 1981, vol. 23, no.4, pp. 983–990.
Maier, H. and Hesse, J., Growth, Properties and Applications of Narrow-Gap Semiconductors, in Organic Crystal Germanate Semiconductors, Berlin, 1980, pp. 145–219.
Zamel, J.N., Epitaxial Films from Lead Chalcogenides and Related Compounds, in Solid State Surface Science, Green, M., Ed., New York: Marcel Dekker, 1969. Translated under the title Poverkhnostnye svoistva tverdykh tel, Moscow: Mir, 1972.
Kawamura, H., Phase Transition in IV-VI Compounds, Lect. Notes Phys., 1980, vol. 133, pp. 470–494.
Abdullin, Kh.A., Lebedev, A.I., Gas'kov, A.M., Demin, V.N., and Zlomanov, V.P., Structural Phase Transition in the PbTe1−x S x Solid Solution, Pis'ma Zh. Eksp. Teor. Fiz., 1984, vol. 40, no.6, pp. 229–231.
Abdullin, Kh.A. and Lebedev, A.I., Effect of Defects and Impurities on Free Carrier Scattering in the Vicinity of the Phase Transition in Pb1−x Ge x Te Ferroelectric Semiconductor, Fiz. Tverd. Tela (Leningrad), 1983, vol. 25, no.12, pp. 3571–3576.
Popov, V.P., Tikhonov, P.A., and Tomaev, V.V., Investigation into the Mechanism of Oxidation on the Surface of Lead Selenide Semiconductor Structures, Fiz. Khim. Stekla, 2003, vol. 29, no.5, pp. 686–694 [Glass Phys. Chem. (Engl. transl.), 2003, vol. 29, no. 5, pp. 494–500].
Lyubchenko, A.V., Sal'nikov, E.A., and Sizov, F.F., Fizicheskie osnovy poluprovodnikovoi infrakrasnoi fotoelektroniki (Physical Principles of Semiconductor IR Photoelectronics), Kiev: Naukova Dumka, 1984.
Nesmelova, I.M., Opticheskie svoistva uzkoshchelevykh poluprovodnikov (Optical Properties Narrow-Band-Gap Semiconductors), Novosibirsk: Nauka, Sib. Otd. Ross. Akad. Nauk, 1992.
Nishi, S., Kawamura, H., and Murase, K., Study of Lattice Instability by mm-Wave Magnetoplasma Reflection in PbTe-SnSe Compound Semiconductors, Phys. Status Solidi B, 1980, vol. 97, no.2, pp. 581–590.
Katayama, S. and Murase, K., Role of Local Displacement of Ge Ions on Structural Instability in Pb1− x Ge x Te, Solid State Commun., 1980, vol. 36, no.8, pp. 707–711.
Akimov, B.A., Borshchevskii, V.V., Brandt, N.B., and Pirogov, Yu.A., Effect of Indium Dopants on Dielectric and Photoconducting Properties of Pb1−x Sn x Te Ferroelectric Semiconductors, Fiz. Tverd. Tela (Leningrad), 1990, vol. 32, no.1, pp. 273–275.
Tomaev, V.V., Makarov, L.L., Tikhonov, P.A., and Solomennikov, A.A., Oxidation Kinetics of Lead Selenide, Fiz. Khim. Stekla, 2004, vol. 30, no.4, pp. 474–483 [Glass Phys. Chem. (Engl. transl.), 2004, vol. 30, no. 4, pp. 349–355].
Bestaev, M.V., Makhin, A.V., Moshnikov, V.A., and Tomaev, V.V., A Technique of Preparing a Batch for Producing Lead and Tin Chalcogenide Solid Solutions by Vapor Phase Methods, RF Patent 2155830, 1997.
Tomaev, V.V., Growth and Investigation of Lead and Tin Chalcogenide Single Crystals, Izv. SPbGETU (LETI), St. Petersburg, 2002, no. 1, pp. 34–41.
Tomaev, V.V., Moshnikov, V.A., Miroshkin, V.P., Gar'kin, L.N., and Zhivago, A.Yu., Impedance Spectroscopy of Metal-Oxide Nanocomposites, Fiz. Khim. Stekla, 2004, vol. 30, no.5, pp. 624–637 [Glass Phys. Chem. (Engl. transl.), 2004, vol. 30, no. 5, pp. 461–470].
Tomaev, V.V., Moshnikov, V.A., Miroshkin, V.P., and Gar'kin, L.N., Investigation into the Gas Sensitivity in Nanostructured Films Based on Tin Dioxide by Impedance Spectroscopy, Fiz. Khim. Stekla, 2005, vol. 31, no.2, pp. 172–180 [Glass Phys. Chem. (Engl. transl.), 2005, vol. 31, no. 2, pp. 446–451].
Ivanov-Shits, A.K. and Murin, I.V., Ionika tverdogo tela (Ionics of Solids), St. Petersburg: St. Petersburg Gos. Univ., 2000, vol. 1.
Lines, M.E. and Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials, Oxford: Oxford Univ. Press, 1977. Translated under the title Segnetoelektriki i rodstvennye im materialy, Moscow: Mir, 1981.
Author information
Authors and Affiliations
Additional information
Original Russian Text Copyright © 2005 by Fizika i Khimiya Stekla, Tomaev, Miroshkin, Gar'kin, Tikhonov.
Rights and permissions
About this article
Cite this article
Tomaev, V.V., Miroshkin, V.P., Gar'kin, L.N. et al. Dielectric Properties and Phase Transition in the PbSe + PbSeO3 Composite Material. Glass Phys Chem 31, 812–819 (2005). https://doi.org/10.1007/s10720-005-0130-9
Received:
Issue Date:
DOI: https://doi.org/10.1007/s10720-005-0130-9