Abstract
Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiCxNy, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473–1173 K with the use of a complex gaseous mixture of hexamethyldisilazane Si2NH(CH3)6, ammonia, and helium. The chemical and phase compositions and the physicochemical properties of the films are investigated using IR, Auger electron, and X-ray photoelectron spectroscopy; ellipsometry; synchrotron X-ray powder diffraction; electron and atomic-force microscopy; microhardness measurements with a nanoindenter; and electrical measurements. Correlations of the composition of the initial gas phase and the synthesis temperature with a number of functional properties of the SiCxNy silicon carbonitride films are revealed.
Similar content being viewed by others
REFERENCES
Badzian, A., Badzian, T., Roy, R., and Drawl, W., Silicon Carbonitride, a New Hard Material and Its Relation to the Confusion about “Harder Than Diamond” C3N4, Thin Solid Films, 1999, vol. 354, pp. 148–153.
Badzian, A., Badzian, T., Drawl, W., and Roy, R., Silicon Carbonitride: A Rival to Cubic Boron Nitride, Diamond Relat. Mater., 1998, vol. 7, pp. 1519–1525.
Chen, L.C., Yang, C.Y., Bhusari, D.M., et al., Formation of Crystalline Silicon Carbon Nitride Films by Microwave Plasma-Enhanced Chemical Vapour Deposition, Diamond Relat. Mater., 1996, vol. 5, nos.32-5, pp. 514–518.
Tharigen, T., Lippold, G., Riede, V., et al., Hard Amorphous CSixNy Thin Films Deposited by RF Nitrogen Plasma Assisted Pulsed Laser Ablation of Mixed Graphite/Si3N4 Targets, Thin Solid Films, 1999, vol. 348, pp. 103–113.
Bendeddouche, A., Berjoan, R., Beche, E., et al., SiCN Amorphous Materials Chemical Vapour Deposited Using the Si(CH3)3-NH3-H2 System, J. Phys. IV, 1995, vol. C5, part 2, pp. C5-793–C5-800.
Besling, W.F.A., Vanderput, P.J.J.M., and Schoonman, J., Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride, J. Phys. IV, 1995, vol. C5, part 2, pp. C5-953–C5-960.
Cao, Z.X., Nanocrystalline Silicon Carbonitride Thin Films Prepared by Plasma Beam-Assisted Deposition, Thin Solid Films, 2001, vol. 401, pp. 94–101.
Cao, Z.X., Plasma Enhanced Deposition of Silicon Carbonitride Thin Films and Properties Characterization, Diamond Relat. Mater., 2002, vol. 11, pp. 16–21.
Fainer, N.I., Kosinova, M.L., and Rumyantsev, Yu.M., Silicon and Boron Carbonitride Thin Films: Synthesis and Investigation into the Composition and Structure, Ross. Khim. Zh., 2001, vol. 45, no.3, pp. 101–108.
Fainer, N.I., Kosinova, M.L., Rumyantsev, Yu.M., and Maksimovskii, E.A., Nanocrystalline Functional Materials Based on Silicon Carbonitride Films, in Almaznye plenki i plenki rodstvennykh materialov. Trudy dvenadtsatogo mezhdunarodnogo simpoziuma “Tonkie plenki v mikroelektronike” (Diamond Films and Films of Related Materials: Proceedings of the 12th International Symposium “Thin Films in Microelectronics”), Kharkov: IPTs Kontrast, 2001, pp. 242–246.
Fainer, N.I., Kostinova, M.L., Rumyantsev, Yu.M., and Kuznetsov, F.A., RPECVD Thin Silicon Carbonitride Films Using Hexamethyldisilazane, J. Phys. IV, 1999, vol. 9, pp. Pr8-769–Pr8-775.
Fainer, N.I., Maximovskii, E.A., Rumyantsev, Yu.M., Kosinova, M.L., and Kuznetsov, F.A., Study of Structure and Phase Composition of Nanocrystal Silicon Carbonitride Films, Nucl. Instrum. Methods Phys. Res., Sect. A, 2001, vol. 470, nos.1–2, pp. 193–197.
JCPDS International Center for Diffraction Data, 1988, vol. 9, card no. 250.
Author information
Authors and Affiliations
Additional information
Original Russian Text Copyright © 2005 by Fizika i Khimiya Stekla, Fainer, Kosinova, Rumyantsev, Maksimovskii, Kuznetsov, Kesler, Kirienko, Han Bao-Shan, Lu Cheng.
Rights and permissions
About this article
Cite this article
Fainer, N.I., Kosinova, M.L., Rumyantsev, Y.M. et al. Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds. Glass Phys Chem 31, 427–432 (2005). https://doi.org/10.1007/s10720-005-0079-8
Issue Date:
DOI: https://doi.org/10.1007/s10720-005-0079-8