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Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds

  • Proceedings of the Topical Meeting of the European Ceramic Society “Nanoparticles, Nanostructures, and Nanocomposites”
  • (St. Petersburg, Russia, July 5–7, 2004)
  • Published:
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Abstract

Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiCxNy, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473–1173 K with the use of a complex gaseous mixture of hexamethyldisilazane Si2NH(CH3)6, ammonia, and helium. The chemical and phase compositions and the physicochemical properties of the films are investigated using IR, Auger electron, and X-ray photoelectron spectroscopy; ellipsometry; synchrotron X-ray powder diffraction; electron and atomic-force microscopy; microhardness measurements with a nanoindenter; and electrical measurements. Correlations of the composition of the initial gas phase and the synthesis temperature with a number of functional properties of the SiCxNy silicon carbonitride films are revealed.

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Original Russian Text Copyright © 2005 by Fizika i Khimiya Stekla, Fainer, Kosinova, Rumyantsev, Maksimovskii, Kuznetsov, Kesler, Kirienko, Han Bao-Shan, Lu Cheng.

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Fainer, N.I., Kosinova, M.L., Rumyantsev, Y.M. et al. Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds. Glass Phys Chem 31, 427–432 (2005). https://doi.org/10.1007/s10720-005-0079-8

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  • DOI: https://doi.org/10.1007/s10720-005-0079-8

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