Different methods are proposed for protecting the surfaces of silicon substrates in the fabrication of silicon transistors. The results of thermal operations with technological regimes for obtaining a low-melting glassy layer in order to protect the surface of p – n junction substrates from different external actions are presented.
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Translated from Steklo i Keramika, No. 5, pp. 25 – 28, May, 2017.
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Ismailov, T.A., Sarkarov, T.É., Shangereeva, B.A. et al. Surface Protection of Low-Melting Glass Based Silicon Substrates for Silicon Transistor Fabrication. Glass Ceram 74, 169–171 (2017). https://doi.org/10.1007/s10717-017-9954-8
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DOI: https://doi.org/10.1007/s10717-017-9954-8