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Ballistic magnetoresistance in perovskite magnetonanocontacts under high-bias voltages

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Abstract

Ballistic magnetoresistance is studied in point contacts prepared by a break junction technique. The La0.7Sr0.3MnO3 ceramic is fixed to an elastic substrate and a point contact is obtained by a fracture creation using the three point bending mechanism. The percentage change of the resistance in a field switch between 0 and 3.8 k Oe is of the order of 1000% at room temperature.

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Authors and Affiliations

  1. Institute of Molecular Physics, Polish Academy of Sciences, M. Smoluchowskiego 17, 60-179, Poznań, Poland

    J. Baszyński, T. Toliński, W. Kowalski & A. Kowalczyk

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  1. J. Baszyński
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  2. T. Toliński
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  3. W. Kowalski
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  4. A. Kowalczyk
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Baszyński, J., Toliński, T., Kowalski, W. et al. Ballistic magnetoresistance in perovskite magnetonanocontacts under high-bias voltages. Czech J Phys 52 (Suppl 1), A13–A16 (2002). https://doi.org/10.1007/s10582-002-0001-8

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  • DOI: https://doi.org/10.1007/s10582-002-0001-8

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