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Zinc-Deficiency Induced g-C3N4 Nanosheets: Photocatalytic Nitrogen Fixation Study and Carrier Dynamics

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Abstract

g-C3N4 has great application prospect in the field of photocatalytic nitrogen fixation owing to the advantages of abundant raw materials, low toxicity, low consumption, high efficiency and stability. However, the low surface-active site and high carrier recombination rate limit their nitrogen fixation activities. Defect regulation is one of the effective methods to improve photocatalytic nitrogen fixation activity. In this paper, g-C3N4 nanosheets are successfully modified by ZnS containing zinc vacancy, which enhanced the carrier transport capacity and active site of g-C3N4 for photocatalytic nitrogen fixation. Thus, without any sacrificial agent, an optimized nitrogen fixation activity of 2.1 µmol·h−1 (105 µmol·h−1·g−1) is achieved with the irradiation of visible light, which presents obvious advantages among the latest reported g-C3N4 related photocatalysts. The morphology, structure and photocatalytic carrier dynamics of the photocatalyst are studied by a series of experimental characterizations.

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Acknowledgements

We thank the Scientific Research Funds project of Education Department of Liaoning Province (Grant No. L2019012), the National Natural Science Foundation of China (Grant Nos. U1904195, U1704140), the Key Research Programs in Universities of Henan Province (Grant No. 20A150031), Science and Technology Innovation Talent Support Program of Henan Province (Grant No. 19HASTIT034), Science and Technology Research Project of Henan Province (Grant No. 202102210055).

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Correspondence to Lijing Wang, Peng Qu or Daosheng Liu.

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Qi, Y., Chen, Y., Wang, R. et al. Zinc-Deficiency Induced g-C3N4 Nanosheets: Photocatalytic Nitrogen Fixation Study and Carrier Dynamics. Catal Lett 151, 1546–1555 (2021). https://doi.org/10.1007/s10562-020-03415-5

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