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Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber

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Abstract

The performance of a piecewise-stressed ZnO piezoelectric semiconductor nanofiber is studied with the multi-field coupling theory. The fields produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Specific distributions of potential barriers, wells, and regions with effective polarization charges are found. The results are fundamental for the mechanical tuning on piezoelectric semiconductor devices and piezotronics.

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Authors and Affiliations

  1. Department of Mechanics, Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Huazhong University of Science and Technology, Wuhan, 430074, China

    Shuaiqi Fan & Yuantai Hu

  2. Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588 0526, U.S.A.

    Jiashi Yang

Authors
  1. Shuaiqi Fan
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  2. Yuantai Hu
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  3. Jiashi Yang
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Corresponding author

Correspondence to Yuantai Hu.

Additional information

Citation: FAN, S. Q., HU, Y. T., and YANG, J. S. Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber. Applied Mathematics and Mechanics (English Edition), 40(5), 591–600 (2019) https://doi.org/10.1007/s10483-019-2481-6

Project supported by the National Natural Science Foundation of China (Nos. 11672113 and 51435006) and the Key Laboratory Project of Hubei Province of China (No. 2016CFA073)

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Fan, S., Hu, Y. & Yang, J. Stress-induced potential barriers and charge distributions in a piezoelectric semiconductor nanofiber. Appl. Math. Mech.-Engl. Ed. 40, 591–600 (2019). https://doi.org/10.1007/s10483-019-2481-6

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  • DOI: https://doi.org/10.1007/s10483-019-2481-6

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