Optimization and development of the RF MEMS structures for low voltage, high isolation and low stress

Abstract

MEMS capacitive switches have longer lifetimes compared to other types of metal-to-metal switches, and when placed on the membrane on the transmission line, they can easily return to the up-state due to a dielectric layer. They also transmit the input signal with more power and frequency and therefore, they are better than metal-to-metal switches. In this paper, first three switches were considered as the basic structures. Then, in order to demonstrate the credibility and high quality of the simulations, the same switches were simulated. The obtained results are very close to the results of fabrication of these switches. In the next step, with the presentation of three new structures, stimulation voltage, stress, switching time and isolation were improved in four steps. The mechanical simulation of the switch was performed to determine the amount of displacement, the amount of stress and the resonant frequency using the COMSOL software. In addition, electrical simulation of the switch was performed to obtain the S-parameter using the HFSS software. The simulation results demonstrate that the isolation is 57–66 dB and the insertion loss is 0.3–2 dB in the desired frequency band (1–50 GHz). Using new spring structures, the actuation voltage was reduced from 4.8 V in basic structures (the smallest in three structures) to 2.4 V in new structures, which is considered excellent. In order to increase the lifetime of the switch, the stress in the new switches is reduced from 12 to 4.5 MPa compared to the basic switches.