Analog Integrated Circuits and Signal Processing

, Volume 98, Issue 2, pp 331–346 | Cite as

A robust, ultra low-power, data-dependent-power-supplied 11T SRAM cell with expanded read/write stabilities for internet-of-things applications

  • Vishal Sharma
  • Maisagalla Gopal
  • Pooran Singh
  • Santosh Kumar VishvakarmaEmail author
  • Shailesh Singh Chouhan


With the increased requirement of on-chip data computations in internet of things based applications, the embedded on-chip SRAM memory has been under its renovation stage to overcome the classical problems like stability and poor energy efficiency. In this work, a data-dependent-power-supply mechanism for a new 11T SRAM cell is proposed with ultra-low leakage and improved read/write stability against the process–voltage–temperature variations. The proposed cell consumes static power in the fraction of picowatt range and has considerable enhancement in the value of write static noise margin (WSNM). In addition, the use of associated read decoupling approach, with the column-based read buffer, further improves the read stability of the proposed cell and make it comparable with the hold stability value. The percentage reduction in the leakage power of proposed 11T cell is \(99.97\%\), \(99.93\%\) and \(99.97\%\), while the WSNM 1 is \(6.98\times\), \(3.12\times\) and \(1.46\times\), and WSNM 0 is \(5.55\times\), \(1.25\times\) and \(1.16\times\) larger when operating at 0.4 V and compared to the conventional 6T and threshold voltage techniques based VTH_9T and data aware write assist (DAWA) 12T SRAM cell structures respectively. \(I_{read}{/}I_{leak}\) ratio for the proposed cell has improved by \(6.55\times\), \(6.22\times\) and \(5.11\times\) when compared with the 6T, VTH_9T and DAWA12T SRAM to increase the memory density. Further, the post-layout Monte Carlo simulation results (2000 samples) confirm the robustness of the proposed cell against the process variations.


static random access memory (SRAM) Ultra-low power Static noise margin (SNM) Write ability Internet of things (IoT) 



The authors would like to thank Special Manpower Development Program for Chips to System Design (SMDP-C2SD) research project of Department of Electronics and Information Technology (DEITY) under Ministry of Communication and Information Technology, Government of India to provide the lab facilities. Authors are also thankful to the Center for International Mobility (CIMO Grant No.: Intia-1- 2016-03), and Aalto University, Finland for their financial support and the lab facility.


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© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  1. 1.Nanoscale Devices, VLSI Circuit and System Design Lab, Department of Electrical EngineeringIndian Institute of TechnologyIndoreIndia
  2. 2.EISLAB, Department of Computer Science, Electrical and Space EngineeringLulea University of Technology LuleåSweden

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