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2–18 GHz wide band co-design integrated LNA with active antenna for mobile communication technologies

  • Gunjan Mittal Roy
  • Binod Kumar Kanuajia
  • Santanu Dwari
  • Sandeep Kumar
  • Hanjung Song
Article
  • 119 Downloads

Abstract

This research proposes afresh wide bandwidth co-design approach of low noise amplifier (LNA) with active antenna for mobile (3rd, 4th and specially 5th generation) communication technologies. Three major approaches are used for binding this research. First approach proposes LNA designs made of cascaded common gate (CG) and common source (CS) stages with proposed image network technique. This novel technique observed inverse impedance at output of image network in proposed designs that provides wide bandwidth at the desired band of operation. Single CG stage with image network achieves 3G 1st band for the fixed wireless internet access while addition of T-network as an output stage to CG succeed 3G 2nd band for mobile broadband access. Moreover, cascaded CG and CS stages with proposed technique provides 4G wide bandwidth within range of 2–8 GHz which could be occupies high speed data rate. While the displacement of inductors into microstrip lines in the proposed LNA design achieves much higher bandwidth from 2 to 18 GHz and could be provides best solution for information carrying capacity in the 5G mobile technology. In second approach, asymmetric F-shaped slotted antenna is design which obtained bandwidth from 10.7 to 14 GHz within desired receiving direction. Finally, integration of proposed LNA design with F-shaped slotted active antenna provides co-design receiver and obtains minimum attenuation with highest gain. Entire proposed designs are implemented into ADS platform using commercial available RF-mixed 65 nm CMOS process. Measured results of chip design for proposed LNAs under the power consumption of 7.3 mW with fixed operating voltage of 0.9 V made good correlation with the simulation results.

Keywords

Co-design Low noise amplifier (LNA) Active antenna Mobile communication CMOS (complementary metal oxide semiconductor) 

Notes

Acknowledgements

This work was supported by a grant from Inje University for the Research in 2017 (20170098).

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Copyright information

© Springer Science+Business Media, LLC, part of Springer Nature 2018

Authors and Affiliations

  • Gunjan Mittal Roy
    • 1
  • Binod Kumar Kanuajia
    • 2
  • Santanu Dwari
    • 1
  • Sandeep Kumar
    • 3
  • Hanjung Song
    • 3
  1. 1.Indian Institute of TechnologyDhanbadIndia
  2. 2.School of Computational and Integrative SciencesJNUNew DelhiIndia
  3. 3.Department of Nano Science and Engineering, Center for Nano ManufacturingInje UniversityGimhaeKorea

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