Abstract
This paper presents a temperature measurement circuit which uses only one single Bipolar Junction Transistor for ∆Vbe measurement. This type of measurement is suitable for Complementary Metal–Oxide–Semiconductor (CMOS) processes, where characterized Thermal Sensing Diodes (TSDs) are available. Measurements are based on dynamic biasing which is synchronized with Correlated Double Sampling to suppress 1/f noise, offset and reduce power consumption in the sensor. Furthermore, this work avoids the use of Metal Insulator Metal Capacitors, which might be a cost concern for some designs. Based on these criteria, a test chip was designed and manufactured in standard 110 nm CMOS technology. Without any trimming, an accuracy of ±7.3 °C (3σ) over a temperature range of −40 to 125 °C was achieved. Measurements were performed across one typical wafer and 4 process corner wafers. A single TSD is used as the thermal sensing element. The circuit occupies an area of 0.26 mm2 and has an energy consumption of 1.3 uJ per conversion.
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Notes
Current mode refers to a fact that information is carried by current.
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Authors would like to thank design, manufacturing and test teams from ON Semiconductor.
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Ledvina, J., Koudar, I. & Horský, P. Single BJT based temperature measurement circuit without MIMC and calibration. Analog Integr Circ Sig Process 91, 111–118 (2017). https://doi.org/10.1007/s10470-016-0911-1
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DOI: https://doi.org/10.1007/s10470-016-0911-1