Abstract
A systematic study of the index failure for RF circuit subjected to temperature stress is presented in this paper. The effect of the temperature stress on the performance indexes such as S21, bandwidth, output power is examined. A broadband power amplifier is taken as a example to study the index failure. The performance degradation is demonstrated and analysed by conducting some step-stress ADT.
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This work was supported by the 863 Program of China (Grant No. 2015AA01A703) and the Tianjin University-Qinghai University for Nationalities independent innovation fund cooperation project(2015).
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Lin, Q., Fu, H., Cheng, Q. et al. Study of the index failure for power amplifier caused by temperature. Analog Integr Circ Sig Process 89, 177–183 (2016). https://doi.org/10.1007/s10470-016-0807-0
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DOI: https://doi.org/10.1007/s10470-016-0807-0