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Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology

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Abstract

We present the performance characteristics of a single photon avalanche diode (SPAD) fabricated in a 180 nm standard CMOS image sensor technology. The SPAD structure was implemented in 8 different diameters between 5 and 40 μm to determine the influence of size variation on the SPAD performances in terms of dark count rate, afterpulsing, efficiency and time resolution. The measurements show a dark count rate below 10 kHz at 15 °C with a low afterpulsing probability (0.2 % at an excess bias of 300 mV), a good Photodetection efficiency (~20 %) and a very good time resolution (<70 ps FWHM at 450 nm) .

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Authors and Affiliations

  1. ICube, University of Strasbourg and CNRS, 23 rue du Loess, Strasbourg, France

    Imane Malass, Wilfried Uhring, Jean-Pierre Le Normand, Norbert Dumas & Foudil Dadouche

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  1. Imane Malass
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  2. Wilfried Uhring
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  3. Jean-Pierre Le Normand
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  4. Norbert Dumas
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  5. Foudil Dadouche
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Correspondence to Wilfried Uhring.

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Malass, I., Uhring, W., Le Normand, JP. et al. Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology. Analog Integr Circ Sig Process 89, 69–76 (2016). https://doi.org/10.1007/s10470-016-0763-8

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  • DOI: https://doi.org/10.1007/s10470-016-0763-8

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