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A full-band UWB common-gate band-pass noise matched g m -boosted series peaked CMOS differential LNA

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Abstract

This paper presents a low-power noise-matched fully-differential common-gate (CG) low noise amplifier (LNA) for ultrawideband receiver operating in the full 3.1–10.6 GHz band. Performance was optimized by employing the transconductance ‘g m ’ boosted CG LNA topology with series peaking along with an input noise matching network. A common source g m -boosting amplifier, in conjunction with an LC T-network, was used to share the bias current with the CG stage. The LNA was demonstrated using a 130 nm IBM CMOS process technology and it consumed 7 mW from a 1 V supply. It exhibited an input return loss (S11) and an output return loss (S22) of −10.5 and −14 dB respectively. In addition, it also achieved a forward power gain (S21) of 14.5 dB and a noise figure between 4.5 and 5.0 dB.

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Author notes

  1. Muhammad Khurram

    Present address: Department of Computer and Information Systems Engineering, NED University of Engineering and Technology, Karachi, Pakistan

Authors and Affiliations

  1. Center for Research in Analog and VLSI microsystems dEsign (CRAVE), Massey University, Auckland, New Zealand

    Muhammad Khurram & S. M. Rezaul Hasan

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  1. Muhammad Khurram
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  2. S. M. Rezaul Hasan
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Correspondence to S. M. Rezaul Hasan.

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Khurram, M., Rezaul Hasan, S.M. A full-band UWB common-gate band-pass noise matched g m -boosted series peaked CMOS differential LNA. Analog Integr Circ Sig Process 76, 47–60 (2013). https://doi.org/10.1007/s10470-013-0085-z

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  • DOI: https://doi.org/10.1007/s10470-013-0085-z

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