Abstract
This paper presents a millimeter-wave (mm-wave) pulse generator (PG) integrated with a new dipole-patch antenna in a 65-nm CMOS process for short range and portable active imaging applications. The integrated wide-band dipole-patch antenna is a combination of two type of radiators, patch and dipole, to exploit both advantages of the two antenna types. The \(395\hbox{-}{\upmu}\hbox{m}\times 625\hbox{-}{\upmu}\hbox{m}\) dipole-patch antenna in the top metal layer of the 65-nm CMOS process has a wide 30.2-GHz bandwidth from 73.9 to 104.1 GHz with minimum reflection coefficient of −29 dB at 101.6 GHz and resistance from 27.3 to 47.5 \(\Upomega\) by simulation in Momentum, ADS 2009. We proposed a resistor-less mm-wave damping PG whose peak-to-peak pulse output is 1.66-V with 9.1-ps duration in HSPICE simulation at the antenna input terminals. Radiation measurements by using a horn antenna and a Schottky diode placed at a 39-mm distance from the chip’s surface show the main beam’s peak at θ max = 17° with a half-power beam-width (HPBW) of 9° and the second beam’s peak at θ sec = −23°. Maximum radiated powers in horizontal and vertical planes are respectively 2.4 and 0.5 μW.
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Acknowledgment
The VLSI chip in this study has been fabricated in the chip fabrication program of VDEC, the Univ. of Tokyo in collaboration with eShuttle Inc. & Fujitsu Semiconductor Ltd., Cadence Design Systems, Inc., Synopsys, Inc., Mentor Graphics, Inc., and Agilent Technologies Japan, Ltd. The authors would like to thank Professor M. Ikeda’s for supporting chip design and CAD tools.
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Khanh, N.N.M., Sasaki, M. & Asada, K. A millimeter-wave resistor-less pulse generator with a new dipole-patch antenna in 65-nm CMOS. Analog Integr Circ Sig Process 73, 789–799 (2012). https://doi.org/10.1007/s10470-012-9931-7
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DOI: https://doi.org/10.1007/s10470-012-9931-7