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Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths


In the millimeter-wave frequency range, electromagnetic (EM) effects can significantly influence a device behavior. As the core of modern communication systems, active devices such as field effect transistors (FETs) require up-to-date models to accurately integrate such effects, especially in terms of noise performance since most of communication systems operate in noisy environments. Furthermore, to keep low-noise amplification over a wide frequency band, the transistor noise resistance Rn must be substantially reduced to make the system insensitive to impedance matching. Since this can be realized through large gate-width devices, a novel large gate-width FET noise model is proposed which efficiently integrates EM wave propagation effects, one of the most important EM effects in mm-wave frequencies.

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Asadi, S., Yagoub, M.C.E. Advanced CAD tool for noise modeling of RF/microwave field effect transistors with large gate widths. Analog Integr Circ Sig Process 67, 353–363 (2011).

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