Abstract
Electrically tunable surface adhesion is of vital importance for ubiquitous microelectromechanical systems, and is normally symmetric to the applied bias voltage. Here we report the asymmetric bias-tunable surface adhesion of semiconductor nanofilms by taking molybdenum disulfide (MoS2) as a demo with graphene, hexagonal boron nitride, and bulk n-type doped silicon serving as the normal control group. The bias-tunable adhesion force between the Au-coated tip and the Au back electrode supported MoS2 nanofilms was deciphered by combining conductive atomic force microscopic examinations in vacuum and theoretical simulations. The asymmetric bias-tunability is found to be significantly stronger than that of the control group, attributing to the built-in electric field at the Schottky junction between the nanofilm and back electrode.
摘要
电调控表面粘附对微机电系统是至关重要的, 同时相对于外加电压极性常具有对称性. 本文以二硫化钼为研究对象, 以石墨 烯、氮化硼和n型硅为参照组展示半导体薄膜表面的非对称粘附行为. 研究主要通过导电原子力显微镜和理论模拟来揭示金探针与金 基底上二硫化钼之间的偏压调控粘附力的行为. 结果反映二硫化钼表面偏压对粘附的调控能力远大于参照组材料, 这种非对称行为主 要来源于半导体薄膜与背电极之间形成的肖特基结中的内建电场.
References
M. Gad-el-Hak, The MEMS Handbook (CRC Press, Boca Raton, 2002).
S. Rajauria, O. Ruiz, S. V. Canchi, E. Schreck, and Q. Dai, Electrostatically tunable adhesion in a high speed sliding interface, Phys. Rev. Lett. 120, 026101 (2018).
M. Wolloch, G. Levita, P. Restuccia, and M. C. Righi, Interfacial charge density and its connection to adhesion and frictional forces, Phys. Rev. Lett. 121, 026804 (2018).
C. A. de Coulomb, Premier Mémoire sur l’Électricité et le Magnétisme, Mem. Acad. Roy. Sci. 569 (1785).
E. Bonaccurso, F. Schönfeld, and H. J. Butt, Electrostatic forces acting on tip and cantilever in atomic force microscopy, Phys. Rev. B 74, 085413 (2006).
Y. Jiang, L. Yue, B. Yan, X. Liu, X. Yang, G. Tai, and J. Song, Electric control of friction on silicon studied by atomic force microscope, Nano 10, 1550038 (2014).
Law, B. M, and Rieutord F, Electrostatic forces in atomic force microscopy, Phys. Rev B66, 035402 (2002).
Y. Zhang, D. Zhang, Y. Wang, Q. Liu, Q. Li, and M. Dong, Atomic-scale friction of black and violet phosphorus crystals: Implications for phosphorus-based devices and lubricants, ACS Appl. Nano Mater. 4, 9932 (2021).
L. H. Li, T. Tian, Q. Cai, C. J. Shih, and E. J. G. Santos, Asymmetric electric field screening in van der Waals heterostructures, Nat. Commun. 9, 1271 (2018).
W. Schottky, Zur Halbleitertheorie der Sperrschicht-und Spitzengle-ichrichter, Z. Physik 113, 367 (1939).
N. F. Mott, The theory of crystal rectifiers, Proc. R. Soc. Lond. A 171, 27 (1939).
J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee, Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors, Phys. Rev. X 4, 031005 (2014).
H. Hasegawa, and T. Sawada, On the electrical properties of compound semiconductor interfaces in metal/insulator/semiconductor structures and the possible origin of interface states, Thin Solid Films 103, 119 (1983).
Q. Wang, Y. Shao, P. Gong, and X. Shi, Metal-2D multilayered semiconductor junctions: Layer-number dependent Fermi-level pinning, J. Mater. Chem. C 8, 3113 (2020).
R. Zan, Q. M. Ramasse, R. Jalil, T. Georgiou, U. Bangert, and K. S. Novoselov, Control of radiation damage in MoS2 by graphene encapsulation, ACS Nano 7, 10167 (2013).
Y. Liu, J. Guo, E. Zhu, L. Liao, S. J. Lee, M. Ding, I. Shakir, V. Gambin, Y. Huang, and X. Duan, Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions, Nature 557, 696 (2018).
P. C. Shen, C. Su, Y. Lin, A. S. Chou, C. C. Cheng, J. H. Park, M. H. Chiu, A. Y. Lu, H. L. Tang, M. M. Tavakoli, G. Pitner, X. Ji, Z. Cai, N. Mao, J. Wang, V. Tung, J. Li, J. Bokor, A. Zettl, C. I. Wu, T. Palacios, L. J. Li, and J. Kong, Ultralow contact resistance between semimetal and monolayer semiconductors, Nature 593, 211 (2021).
L. Kong, X. Zhang, Q. Tao, M. Zhang, W. Dang, Z. Li, L. Feng, L. Liao, X. Duan, and Y. Liu, Doping-free complementary WSe2 circuit via van der Waals metal integration, Nat. Commun. 11, 1866 (2020).
L. Liu, L. Kong, Q. Li, C. He, L. Ren, Q. Tao, X. Yang, J. Lin, B. Zhao, Z. Li, Y. Chen, W. Li, W. Song, Z. Lu, G. Li, S. Li, X. Duan, A. Pan, L. Liao, and Y. Liu, Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors, Nat. Electron. 4, 342 (2021).
N. Kaushik, A. Nipane, F. Basheer, S. Dubey, S. Grover, M. M. Deshmukh, and S. Lodha, Schottky barrier heights for Au and Pd contacts to MoS2, Appl. Phys. Lett. 105, 113505 (2014).
H. B. Michaelson, The work function of the elements and its periodicity, J. Appl. Phys. 48, 4729 (1977).
G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Doping graphene with metal contacts, Phys. Rev. Lett. 101, 026803 (2008).
L. Romaner, D. Nabok, P. Puschnig, E. Zojer, and C. Ambrosch-Draxl, Theoretical study of PTCDA adsorbed on the coinage metal surfaces, Ag(111), Au(111) and Cu(111), New J. Phys. 11, 053010 (2009).
Acknowledgements
This work was supported by the National and Jiangsu Province Natural Science Foundation (Grant Nos. T2293691, T2293692, and BK20212008) of China, National Key Research and Development Program of China (Grant No. 2019YFA0705400), China Postdoctoral Science Foundation (Grant No. 2021M701703), Jiangsu Funding Program for Excellent postdoctoral talent (Grant No. 2022ZB211), the Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures (Grant No. MCMS-I-0422K01), the Fundamental Research Funds for the Central Universities (Grant No. NJ2022002), and the Fund of Prospective Layout of Scientific Research for NUAA (Nanjing University of Aeronautics and Astronautics).
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Wanlin Guo and Baowen Li conceived the idea of the project. Baowen Li performed the experiments and finite-element simulation. Xiaoyu Xuan, Zhuhua Zhang, Yan Yin, and Min Yi performed the DFT calculations. Wanlin Guo supervised the research. Wanlin Guo, Baowen Li, and Jianxin Zhou analyzed the results. All authors contributed to the discussion and writing of the manuscript.
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Li, B., Xuan, X., Yin, Y. et al. Asymmetric bias-tunable surface adhesion of semiconductor nanofilms. Acta Mech. Sin. 39, 122484 (2023). https://doi.org/10.1007/s10409-023-22484-x
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DOI: https://doi.org/10.1007/s10409-023-22484-x