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Nanoscale strain engineering of graphene and graphene-based devices

Abstract

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here, we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidence for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nano-scale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.

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Acknowledgments

This project was jointly supported by the National Science Foundation under the Institute for Quantum Information and Matter at California Institute of Technology, a grant from the Northrup Grumman Cooperation, and a gift from Mr. Lewis van Amerongen.

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Correspondence to N.-C. Yeh.

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Yeh, NC., Hsu, CC., Teague, M.L. et al. Nanoscale strain engineering of graphene and graphene-based devices. Acta Mech. Sin. 32, 497–509 (2016). https://doi.org/10.1007/s10409-015-0548-9

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Keywords

  • Graphene
  • Strain-engineering
  • Nanostructures
  • Dirac fermions
  • Pseudo-magnetic field
  • Valleytronics