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Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source

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Abstract

The thermal properties of a nanostructured semiconductor are affected by multi-physical fields, such as stress and electromagnetic fields, causing changes in temperature and strain distributions. In this work, the influence of stress-dependent thermal conductivity on the heat transfer behavior of a GaN-based nanofilm is investigated. The finite element method is adopted to simulate the temperature distribution in a prestressed nanofilm under heat pulses. Numerical results demonstrate the effect of stress field on the thermal conductivity of GaN-based nanofilm, namely, the prestress and the thermal stress lead to a change in the heat transfer behavior in the nanofilm. Under the same heat source, the peak temperature of the film with stress-dependent thermal conductivity is significantly lower than that of the film with a constant thermal conductivity and the maximum temperature difference can reach 8.2 K. These results could be useful for designing GaN-based semiconductor devices with higher reliability under multi-physical fields.

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Acknowledgements

This research is supported by the National Natural Science Foundation of China (Grant Nos. 11772294, 11621062) and the Fundamental Research Funds for the Central Universities (Grant No. 2017QNA4031).

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Authors and Affiliations

  1. Department of Engineering Mechanics, and Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Hangzhou, 310027, China

    Qicong Li, Xiaoya Tang & Linli Zhu

  2. Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hong Kong, China

    Haihui Ruan

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  1. Qicong Li
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  2. Xiaoya Tang
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Correspondence to Linli Zhu or Haihui Ruan.

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Li, Q., Tang, X., Zhu, L. et al. Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm Under Pulse Heat Source. Acta Mech. Solida Sin. 34, 27–39 (2021). https://doi.org/10.1007/s10338-020-00182-z

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