Abstract:
We study the charge profile of a C60-FET (field effect transistor) as used in the experiments of Schön, Kloc and Batlogg. Using a tight-binding model, we calculate the charge profile treating the Coulomb interaction in a mean-field approximation. At low doping, the charge profile behaves similarly to the case of a continuous space-charge layer and becomes confined to a single interface layer for doping higher than ∼ 0.3 electron (or hole) per C60 molecule. The morahedral disorder of the C60 molecules smoothens the structure in the density of states.
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Received 21 June 2001
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Wehrli, S., Poilblanc, D. & Rice, T. Charge profile of surface doped C60 . Eur. Phys. J. B 23, 345–350 (2001). https://doi.org/10.1007/s100510170054
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DOI: https://doi.org/10.1007/s100510170054