Effect of the structural quality of the buffer on the magnetoresistance and the exchange coupling in sputtered Co/Cu sandwiches

Abstract:

The effect of the structural quality of the buffer stack on the structural properties, giant magnetoresistance (GMR) and the quality of the antiferromagnetic coupling has been investigated for Co/Cu/Co sandwiches prepared by DC-magnetron sputtering. Three kinds of buffers were employed: type A: Cr(6 nm)/Co(0.8 nm)/Cu(10 nm), type B: Fe(6 nm)/Co(0.8 nm)/Cu(10 nm) and type C: Cr(4 nm)/Fe(3 nm)/Co(0.8 nm)/Cu(10 nm). For B and C type buffers, the antiferromagnetic alignment is very interesting at zero field with a coupling strength larger than 0.4 erg/cm² and a GMR signal reaching 5% at room temperature. However, for the A type buffer the antiferromagnetic coupling completely disappears, while the GMR drops to about 0.8%. X-ray diffraction, atomic force microscopy and transmission electron microscopy have been performed in order to understand the origin of the observed difference in the magnetic properties. The results show a strong difference in the average surface roughness, 1.15 nm and 0.35 nm, respectively for the A and C types buffers, and demonstrate that the quality of the surface of the buffer is the key to optimize both the GMR and the indirect exchange coupling.