Abstract:
A new spin dephasing mechanism is proposed for semiconductors with carrier momentum-dependent transition energies (inhomogeneous broadening) between spin states. In the presence of this inhomogeneous broadening of the spin transitions, spin-conserving (SC) scatterings lead to irreversible spin dephasing in a complete analogy to the optical dephasing of inhomogeneously broadened optical transitions. This phenomenon is demonstrated for the case when the g-factor becomes electron-energy dependent.
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Received 29 June 2000
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Wu, M., Ning, C. A novel mechanism for spin dephasing due to spin-conserving scatterings. Eur. Phys. J. B 18, 373–376 (2000). https://doi.org/10.1007/s100510070021
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DOI: https://doi.org/10.1007/s100510070021