The finite-temperature photoluminescence correlation function in semiconductor heterostructures

Abstract

We report the inclusion of temperature effects on the Mahan-Nozières-De Dominicis framework to study both many-body and temperature effects in photoluminescence spectra of doped semiconductors. The electronic part of the correlation function characterizes the photoluminescence spectra. We have treated the optical valence hole as a localized scattering potential center and studied effects of the electron-hole interaction enhancement on the photoluminescence spectra leading to the appearance of shake-up structures. We also have identified a term in the correlation function which represents the finite-temperature contribution to the intensities of the shake-up structures. The method is used to study the magnetophotoluminescence of modulation-doped quantum wells with a weak periodic lateral potential.