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Models for magnetoresistance in tunnel junctions

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Abstract:

We show there are putative pitfalls when one predicts the magnetoresistance of magnetic tunnel junctions (JMR) based on different toy models. Amongst them are the sensitivity of the MR to the details of the profile of the potential barrier between the metallic electrodes and the insulating barrier, and the common assumption of only one band of electrons. We indicate the ingredients that are necessary to obtain a more complete description of the JMR of magnetic tunnel junctions.

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Authors and Affiliations

  1. Department of Physics, University of Missouri-Rolla, 65409, Rolla, MO, USA

    S. Zhang

  2. Department of Physics, New York University, 4 Washington Place, 10003, New York, NY, USA

    P.M. Levy

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  1. S. Zhang
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  2. P.M. Levy
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Received 9 January 1999 and Received in final form 10 February 1999

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Zhang, S., Levy, P. Models for magnetoresistance in tunnel junctions. Eur. Phys. J. B 10, 599–606 (1999). https://doi.org/10.1007/s100510050892

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  • DOI: https://doi.org/10.1007/s100510050892

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