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General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors

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Abstract:

We present a systematic study of the dependence of the energy relaxation of photo-excited minority electrons on the doping concentration in highly p-doped GaAs. A nonmonotonic dependence is found in the region where the characteristics of the carrier-carrier interaction changes from plasmon-mediated to quasistatically screened. Using a detailed Monte-Carlo study we are able to attribute this observation to a general property of plasmas at high density.

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Authors and Affiliations

  1. Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisca, Università di Modena, 41100 Modena, Italy, , , , , , IT

    U. Hohenester

  2. Institut für Theoretische Physik, Karl-Franzens-Universität Graz, 8010 Graz, Austria, , , , , , AT

    P. Kocevar

  3. Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria, , , , , , AT

    N.E. Hecker

  4. Département de Chimie Physique, Université de Genève, 1211 Geneva and Institut für Physik, Universität Basel, 4056 Basel, Switzerland, , , , , , CH

    R. Rodrigues-Herzog

Authors
  1. U. Hohenester
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  2. P. Kocevar
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  3. N.E. Hecker
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  4. R. Rodrigues-Herzog
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Received: 1st April 1998 / Revised: 6 May 1998 / Accepted: 18 May 1998

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Hohenester, U., Kocevar, P., Hecker, N. et al. General plasma behavior in the energy relaxation of electrons in highly p-doped semiconductors. Eur. Phys. J. B 5, 143–152 (1998). https://doi.org/10.1007/s100510050427

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  • DOI: https://doi.org/10.1007/s100510050427

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