Abstract:
We calculate the electron-phonon scattering rate for an asymmetric double barrier resonant tunneling structure based on dielectric continuum theory, including all phonon modes, and show that interface phonons contribute much more to the scattering rate than do bulk-like LO phonons for incident energies which are approximately within an order of magnitude of the Fermi energy. The maximum scattering rate occurs for incident electron energies near the quantum well resonance. Subband nonparabolicity has a significant influence on electron-phonon scattering in these structures. We show that the relaxation time is comparable to the dwell time of electrons in the quantum well for a typical resonant tunneling structure.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 23 December 1997 / Revised: 24 March 1998 / Accepted: 9 March 1998
Rights and permissions
About this article
Cite this article
Shi, JJ., Sanders, B. & Pan, SH. Electron-phonon scattering in an asymmetric double barrier resonant tunneling structure. Eur. Phys. J. B 4, 113–119 (1998). https://doi.org/10.1007/s100510050357
Issue Date:
DOI: https://doi.org/10.1007/s100510050357