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Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells

  • 5th International Conference on NEAR FIELD OPTICS and RELATED TECHNOLOGIES (NFO-5)
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Abstract

We have discussed the resolution of submicron photoluminescence (PL) imaging using a solid immersion lens (SIL), which collects an evanescent light field. We apply the SIL microscope to measure PL image of a strip-line-patterned GaAs quantum well structure at low temperature. An improved resolution beyond diffraction limit and high collection efficiency of PL are realized.

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Authors and Affiliations

  1. Institute for Solid State Physics, The University of Tokyo, 7-22-1, Roppongi, Minato-Ku, Tokyo, 106-8666, Japan

    Motoyoshi Baba, Masahiro Yoshita, Takeaki Sasaki & Hidefumi Akiyama

Authors
  1. Motoyoshi Baba
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  2. Masahiro Yoshita
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  3. Takeaki Sasaki
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  4. Hidefumi Akiyama
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Corresponding author

Correspondence to Motoyoshi Baba.

Additional information

This paper was originally presented at the 5th International Conference on NEAR FIELD OPTICS and RELATED TECHNOLOGIES (NFO-5), which was held on December 6–10, 1998 at Coganoi Bay Hotel, Shirahama, Japan, in cooperation with the Japan Society of Applied Physics and Mombusho Grant-in Aid for Scientific Research on Priority Areas “Nearfield Nano-optics” Project, sponsored by Japan Society for the Promotion of Science.

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Baba, M., Yoshita, M., Sasaki, T. et al. Application of Solid Immersion Lens to Submicron Resolution Imaging of Nano-Scale Quantum Wells. OPT REV 6, 257–260 (1999). https://doi.org/10.1007/s10043-999-0257-3

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  • DOI: https://doi.org/10.1007/s10043-999-0257-3

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