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Large Size of Real-Time Bi12Si020 Hologram Device Made with Inexpensive Wafer Cutting Method

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Abstract

The large real-time hologram device made by the previous Bi12SiO20 single crystal wafer cutting method poses several problems such as a large residue of material hinders the practical use. A study was carried out to fabricate a real-time hologram device using inexpensive laterally cut circular (1 0 0) Bi12SiO20 single crystal wafers which would be suitable for practical use for 3-dimensional display. An angle incident on a (1 0 0) wafer is applicable to the real-time hologram. An optimal electrode design for a device with uniform diffraction efficiency was considered, and the device properties were experimentally investigated.

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Authors and Affiliations

  1. Corporate Research and Development Group, NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya, 467, Japan

    Yukihisa Osugi

  2. Department of Computer and Systems Engineering, Kobe University, Rokkodai-cho, Nada-ku, Kobe, 657, Japan

    Takumi Minemoto

Authors
  1. Yukihisa Osugi
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  2. Takumi Minemoto
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Correspondence to Yukihisa Osugi.

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Osugi, Y., Minemoto, T. Large Size of Real-Time Bi12Si020 Hologram Device Made with Inexpensive Wafer Cutting Method. OPT REV 4, 459–464 (1997). https://doi.org/10.1007/s10043-997-0459-5

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  • DOI: https://doi.org/10.1007/s10043-997-0459-5

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