Terahertz (THz) waves are a promising candidate for detection, imaging, and advanced communications with ultrafast transmission speed. To develop THz technologies, miniaturized devices for controlling THz waves are essential. In this study, a high-performance vanadium dioxide (VO2)-based switchable band-pass metamaterial integrated with a silicon substrate for THz waves is designed and fabricated. In the “on” state, it offers a passband with a 70% depth and a 0.34 THz bandwidth at 0.56 THz frequency. Additionally, it can be switched thermally to a mirror for 0.1–2.0 THz waves in the “off” state by the phase transition effect of the VO2 film. Moreover, the relationship between the line width and spectra of the device is investigated by simulation. The wheel-shaped gold structure with round corners provides the filter with tractability during fabrication. Furthermore, the silicon substrate allows the metamaterial to be readily miniaturized and integrated into micro-electromechanical systems (MEMS) technology. This filter is expected to be favorable in frequency-selective THz applications.
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The authors would like to appreciate Dr. Y. Pan and Dr. C. Li for the advice on processing the measured data. The authors would like to thank engineer Z. Q. Wang for assistance with the THz spectral measurements. The authors would like to thank China Communication Technology Co., Ltd. for supplying the THz measured system.
This work was supported in part by the Science and Technology Project of Shenzhen, China, under Grant JCYJ20180305124038881 and in part by the MEXT KAKENHI, Japan, under Grant 16H04342.
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Huang, Y., He, Q., Zhang, D. et al. Switchable band-pass filter for terahertz waves using VO2-based metamaterial integrated with silicon substrate. Opt Rev 28, 92–98 (2021). https://doi.org/10.1007/s10043-020-00637-1
- Terahertz filter
- VO2-based metamaterial
- Phase transition
- Silicon substrate