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High-power and highly reliable 638-nm band BA-LD for CW operation

  • Special Section: Regular Paper
  • Laser Display and Lighting Conference (LDC’ 17), Yokohama, Japan
  • Published:
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Abstract

High-power laser diodes (LDs) are strongly demanded as light sources of display applications. In multiple spatial light modulator-type projectors or liquid crystal displays, the light source LDs are operated under CW condition. The high-power 638-nm band broad-area LD for CW operation was newly developed. The LD consisted of two stripes with each width of 75 μm to reduce both an optical power density at a front facet and a threshold current. The newly improved epitaxial technology was also applied to the LD to suppress an electron overflow from an active layer. The LD showed superior output characteristics, such as output of 1.77 W at case temperature of 55 °C with wall plug efficiency (WPE) of 23%, which was improved by 40% compared with the current product. The peak WPE at 25 °C reached 40.6% under the output power of 2.37 W, CW, world highest.

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References

  1. Kuroda, K., Yamamoto, K., Kurimura, S.: Rezadeisupurei (Laser Display) Optronics-sya, Tokyo, p. 1, (2010). (in Japanese)

  2. Yamamoto, K.: Smart Laser Display. Optronics. 376, 134 (2013). (in Japanese)

    Google Scholar 

  3. Yagi, T.: High power red laser diodes: past, present, and future. Rezakenkyu. 41(4), 225 (2013). (in Japanese)

    Google Scholar 

  4. Buckley, E.: Holographic laser projection technology. SID Digest 1074 (2008)

  5. Kuwata, K., Sugiura, H., Sasagawa, T., Michimori, A., Toide, E., Yanagisawa, T., Yamamoto, S., Hirano, Y., Usui, M., Teramatsu, S.: A 65-in. slim (255-mm depth) laser TV with wide-angle projection optical system. J. Soc. Info. Display 17, 875 (2009)

    Article  Google Scholar 

  6. Kuramoto, K., Shimada, N., Ohno, A., Abe, S., Nishiguchi, H., Yagi, T., Miyashita, M.: High power AlGaInP red laser diodes, The 1st laser display conference, LDC, p. 7 (2012)

  7. Kuramoto, K., Nishida, T., Abe, S., Miyashita, M., Mori, K., Yanagisawa, T., Yagi, T.: High Power AlGaInP Laser Diode, The 3rd Laser display conference. vol. 24. (2014)

  8. Moser, A., Latta, E.E., Webb, D.J.: Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers. Appl. Phys. Lett. 55, 1152 (1989)

    Article  ADS  Google Scholar 

  9. Tada, H., Shima, A., Utakoji, T., Motoda, T., Tsugami, M., Nagahama, K., Aiga, M.: Uniform fabrication of highly reliable, 50–60 mW-class, 685 nm, window-mirror lasers for optical data storage. Jpn. J. Appl. Phys. 36(5A), 2666 (1997)

    Article  ADS  Google Scholar 

  10. Shimada, N., Yukawa, M., Shibata, K., Ono, K., Yagi, T., Shima, A.: 640-nm laser diode for small laser display. Proc. SPIE. 7198, 719806–719808 (2009)

    Article  Google Scholar 

  11. Nishida, T., Shimada, N., Ono, K., Yagi, T., Shima, A.: Highly reliable 637-639 nm red high-power LDs for displays. Proc. SPIE. 7583, 758303 (2010)

    Article  Google Scholar 

  12. Fujii, H., Ueno, Y., Endo, K.: Novel window-structure AlGaInP visible-light laser diodes with non-absorbing facets fabricated by utilizing GaInP natural superlattice disordering. Appl. Phys. Lett. 62, 2114 (1993)

    Article  ADS  Google Scholar 

  13. Kaneko, Y., Kishino, K.: Refractive indices measurement of (GaInP) m/(AlInP) n quasi‐quaternaries and GaInP/AlInP multiple quantum wells. J. Appl. Phys. 76, 1809 (1994)

    Article  ADS  Google Scholar 

  14. Moser, M., Winterhoff, R., Geng, C., Queisser, I., Scholz, F., Dörnen, A.: Refractive index of (AlxGa1−x)0.5In0.5P grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 64(2), 235 (1994)

    Article  ADS  Google Scholar 

  15. Nishikawa, Y., Ishikawa, M., Tsuburai, Y., Kokubun, Y.: Effects of Zn electrical activity on band gap energy in Zn-doped InGaAlP grown by metalorganic chemical vapor deposition. Jpn. J. Appl. Phys. 28(11), 2092 (1989)

    Article  ADS  Google Scholar 

  16. Nishikawa, Y., Sugawara, H., Kokubun, Y.: Anomalous Mg incorporation behavior in InGaAlP grown by metalorganic chemical vapor deposition. J. Cryst. Growth. 119, 292 (1992)

    Article  ADS  Google Scholar 

  17. Bour, D.P., Beernink, K.J., Treat, D.W.: 610-nm band AlGaInP single quantum well laser diode. SPIE. Visi. UV. Lasers. 2115, 269 (1994)

    Article  ADS  Google Scholar 

  18. Wood, S.A., Smowton, P.M., Molloy, C.H., Blood, P., Somerford, D.J.: Direct monitoring of thermally activated leakage current in AlGaInP laser diodes. Appl. Phys. Lett. 74, 2540 (1999)

    Article  ADS  Google Scholar 

  19. Shimada, N., Shibata, K., Hanamaki, Y., Hamaguchi, T., Yagi, T.: 12W CW operation of 640nm-band laser diode array. Proc. SPIE. 6876, 6876 (2008)

    ADS  Google Scholar 

  20. Imanishi, D., Sato, Y., Naganuma., K., Ito, S., Hirata., S. : Highly reliable 7 W operation of 644 nm wavelength laser diode arrays with top-hat near field pattern, IEEE 19th international semiconductor laser conference, ThA 8, 49 (2004)

  21. Yagi, T., Kuramoto, K., Wakamatsu, R., Miyashita, M. : Highly reliable high power 638 nm broad area laser diode for display application, Proc. International display workshop 1070 (2015)

  22. Mitsuyama, H., Motoda, T., Nishida, T., Kadoiwa, K., Yagi, T.: Reliability study on high-power 638nm broad stripe laser diode. Optical Rev. 21(1), 43 (2014)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. High Frequency and Optical Device Works, Mitsubishi Electric Corporation, Itami, Japan

    Takehiro Nishida, Kyosuke Kuramoto, Shinji Abe, Masatsugu Kusunoki, Motoharu Miyashita & Tetsuya Yagi

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  1. Takehiro Nishida
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  2. Kyosuke Kuramoto
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  3. Shinji Abe
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  4. Masatsugu Kusunoki
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  5. Motoharu Miyashita
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  6. Tetsuya Yagi
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Correspondence to Takehiro Nishida.

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Nishida, T., Kuramoto, K., Abe, S. et al. High-power and highly reliable 638-nm band BA-LD for CW operation. Opt Rev 25, 160–165 (2018). https://doi.org/10.1007/s10043-017-0381-4

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  • DOI: https://doi.org/10.1007/s10043-017-0381-4

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