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Infrared-light interferometry and a phase-stepping algorithm for measuring the three-dimensional topography of components covered with GaAs or Si

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Abstract

White-light scanning interferometry is extended from the visible-light region to the infrared-light region to measure the three-dimensional (3D) topography of components. An infrared-light interference system based on a linnik-type interferometric microscope is developed according to the principle of transmission of semiconductor materials in the infrared-light region. The 3D topography is measured using the components covered with a Si or GaAs wafer based on a phase-stepping algorithm. The 3D topography can be obtained accurately and relative step heights can be determined within an error less than 3% compared with the instrument MSA 400, a well-known commercially available apparatus used in the field of 3D topography measurement.

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Authors and Affiliations

  1. Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China, Ministry of Education National Key Laboratory of Science and Technology on Electronic Test and Measurement, Xueyuan Road 3, Taiyuan, Shanxi Province, 030051, China

    Xiujian Chou, Kangkang Niu, Yi Liu, Chenyang Xue, Jun Liu & Wendong Zhang

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  1. Xiujian Chou
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  2. Kangkang Niu
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  3. Yi Liu
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  4. Chenyang Xue
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  5. Jun Liu
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  6. Wendong Zhang
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Correspondence to Xiujian Chou.

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Chou, X., Niu, K., Liu, Y. et al. Infrared-light interferometry and a phase-stepping algorithm for measuring the three-dimensional topography of components covered with GaAs or Si. OPT REV 19, 34–38 (2012). https://doi.org/10.1007/s10043-012-0006-x

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  • DOI: https://doi.org/10.1007/s10043-012-0006-x

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