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Numerical analysis of thermal effects in InGaAs system vertical-external-cavity surface-emitting laser

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Abstract

The temperature, the heat flux, and the temperature gradient in an InGaAs system vertical-external-cavity surface-emitting laser are numerical studied by the use of the finite element method, and the analysis is focused on the maximum temperature rise in the active region under various conditions. The effect of substrate thickness on the peak gain of quantum wells, the influence of pump spot radius on the maximum output power, and the spontaneous emission wavelength under different pump power are examined respectively.

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Authors and Affiliations

  1. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, 400047, China

    Peng Zhang, Te-Li Dai, Yi-Ping Liang & Si-Qiang Fan

  2. Chongqing Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing, 400047, China

    Peng Zhang, Te-Li Dai, Yi-Ping Liang & Si-Qiang Fan

  3. College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China

    Yan-Rong Song & Xin-Ping Zhang

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  1. Peng Zhang
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  2. Yan-Rong Song
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  3. Xin-Ping Zhang
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  4. Te-Li Dai
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Correspondence to Peng Zhang.

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Zhang, P., Song, YR., Zhang, XP. et al. Numerical analysis of thermal effects in InGaAs system vertical-external-cavity surface-emitting laser. OPT REV 18, 317–323 (2011). https://doi.org/10.1007/s10043-011-0062-7

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  • DOI: https://doi.org/10.1007/s10043-011-0062-7

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